Forget about 20nm NAND Flash Memory from Micron and Intel, it’s time to remember a 64-gigabit (Gb), 2-bits-per-cell (X2) based monolithic chip made on 19-nanometer (nm) technology, the most advanced memory process technology node in the world announced by SanDisk and Toshiba.
SanDisk will sample its 19nm 64Gb X2 device this quarter and expects to begin high-volume production in the second half of 2011. At that time, SanDisk will also add 3-bits-per-cell (X3) products fabricated with the 19nm process technology to its product lineup.
The 19nm memory die uses the most sophisticated flash memory technology node to date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability.
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